Threshold Temperature Dependence of a Quantum-Dot Laser Diode With and Without p-Doping

    Authors

    G. Ozgur; A. Demir;D. G. Deppe

    Comments

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    Abbreviated Journal Title

    IEEE J. Quantum Electron.

    Keywords

    Characteristic temperature (T(0)); laser threshold; quantum-dot (QD); laser; semiconductor lasers; NEGATIVE CHARACTERISTIC TEMPERATURE; DENSITY-OF-STATES; MODULATION; RESPONSE; INJECTION-LASER; ACTIVE-REGION; HIGH-SPEED; RECOMBINATION; EMISSION; PERFORMANCE; DYNAMICS; Engineering, Electrical & Electronic; Optics; Physics, Applied

    Abstract

    A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous broadening and p-doping influence the QD laser's temperature dependence of threshold T(0). The analysis includes the additional parameters of homogeneous broadening, quantum state populations, and threshold gain. The results show that while the source of negative T(0) can occur due to different effects, the transparency current plays a critical role in both undoped and p-doped QD lasers. Experimental trends of negative T(0) and their dependence on p-doping are replicated in the calculated results. Inhomogeneous broadening is found to play a lesser role to the transparency current in setting T(0). Homogeneous broadening is most important for uniform QDs with thermally isolated ground-state transitions.

    Journal Title

    Ieee Journal of Quantum Electronics

    Volume

    45

    Issue/Number

    10

    Publication Date

    1-1-2009

    Document Type

    Article

    Language

    English

    First Page

    1265

    Last Page

    1272

    WOS Identifier

    WOS:000270215400002

    ISSN

    0018-9197

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