Title

Temperature-dependent refractive index of semiconductors

Authors

Authors

N. Cherroret; A. Chakravarty;A. Kar

Comments

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Abbreviated Journal Title

J. Mater. Sci.

Keywords

GAAS; COEFFICIENT; SILICON; Materials Science, Multidisciplinary

Abstract

A single-oscillator Lorentz model is applied to four different semiconductors having diamond-like crystal structure to describe the temperature dependence of their refractive index between 300 and 600 K. Theoretical results are compared to previous experiments and to experiments carried out in this study for Si, Ge, GaAs, and InP. An efficient experimental method is also presented, enabling fast measurements of the refractive index of materials. Using the Yu-Brooks formalism and the energy bandgap at the X-point of the Brillouin zone, the temperature-dependent refractive indices are calculated and they agree well with experiments, particularly, considering the simplicity of the Lorentz model. However, there are discrepancies between the theory and experiment at high temperatures (near 600 K) in certain cases. This discrepancy may be due to the single-oscillator approximation. Additionally the effect of "self-energy" on the temperature dependence of the energy bandgap, such as the temperature-dependent damping of the oscillation of electrons, can be significant at higher temperatures.

Journal Title

Journal of Materials Science

Volume

43

Issue/Number

6

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

1795

Last Page

1801

WOS Identifier

WOS:000253050700006

ISSN

0022-2461

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