Temperature-dependent refractive index of semiconductors

    Authors

    N. Cherroret; A. Chakravarty;A. Kar

    Comments

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    Abbreviated Journal Title

    J. Mater. Sci.

    Keywords

    GAAS; COEFFICIENT; SILICON; Materials Science, Multidisciplinary

    Abstract

    A single-oscillator Lorentz model is applied to four different semiconductors having diamond-like crystal structure to describe the temperature dependence of their refractive index between 300 and 600 K. Theoretical results are compared to previous experiments and to experiments carried out in this study for Si, Ge, GaAs, and InP. An efficient experimental method is also presented, enabling fast measurements of the refractive index of materials. Using the Yu-Brooks formalism and the energy bandgap at the X-point of the Brillouin zone, the temperature-dependent refractive indices are calculated and they agree well with experiments, particularly, considering the simplicity of the Lorentz model. However, there are discrepancies between the theory and experiment at high temperatures (near 600 K) in certain cases. This discrepancy may be due to the single-oscillator approximation. Additionally the effect of "self-energy" on the temperature dependence of the energy bandgap, such as the temperature-dependent damping of the oscillation of electrons, can be significant at higher temperatures.

    Journal Title

    Journal of Materials Science

    Volume

    43

    Issue/Number

    6

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    1795

    Last Page

    1801

    WOS Identifier

    WOS:000253050700006

    ISSN

    0022-2461

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