Title

Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

Authors

Paul Stokes, University of Central Florida
Eliot Sibar, University of Central Florida
Yashira M. Zayas, University of Central Florida
Saiful I. Khondaker, University of Central Florida

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

Carbon Nanotubes; Electric Breakdown; Electrophoresis; Nanotechnology; Nanotube Devices; Organic Field Effect Transistors; Electronics; Devices; Polythiophene; Mobility; Physics; Applied

Abstract

We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain electrodes using ac dielectrophoresis technique. After removing the metallic nanotubes using electrical breakdown, the devices displayed p-type behavior with on-off ratios up to similar to 2x10(4). The measured field effect mobilities are as high as 123 cm(2)/V s, which is three orders of magnitude higher than typical solution processed organic FET devices.

Journal Title

Applied Physics Letters

Volume

94

Issue/Number

11

Publication Date

1-1-2009

Document Type

Article

DOI Link

http://dx.doi.org/10.1063/1.3100197

Language

English

First Page

3

WOS Identifier

WOS:000264380300062

ISSN

0003-6951

Recommended Citation

Stokes, Paul; Sibar, Eliot; Zayas, Yashira M.; and Khondaker, Saiful I., "Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes" (2009). Faculty Bibliography 2000s. 2186.
https://stars.library.ucf.edu/facultybib2000/2186