Dominant role of grain boundary scattering in the resistivity of nanometric Cu films

    Authors

    T. Sun; B. Yao; A. P. Warren; K. Barmak; M. F. Toney; R. E. Peale;K. R. Coffey

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abstract

    The dominant role of grain boundary scattering in the low-temperature resistivity of both SiO(2) and Ta/SiO(2) encapsulated Cu thin films is demonstrated by the experimental variation and quantification of film thickness, roughness, and grain size. The independent variation in film thickness (28-158 nm) and grain size (35-466 nm) is achieved through subambient temperature film deposition followed by annealing. Experimentally measured film resistivities are compared with both surface scattering and grain boundary scattering models for the classical size effect, showing the dominance of the latter.

    Journal Title

    Physical Review B

    Volume

    79

    Issue/Number

    4

    Publication Date

    1-1-2009

    Document Type

    Article

    WOS Identifier

    WOS:000262978400012

    ISSN

    1098-0121

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