Title

Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing

Authors

Authors

L. Chow; J. C. Gonzalez; E. Del Barco; R. Vanfleet; A. Misiuk; M. Prujszczyk; A. Shunmugavelu; G. Chai;J. Bak-Misiuk

Comments

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Abstract

Re-distribution of Mn atoms implanted into Czochralski silicon (CzSi: Mn) and floating zone silicon (FzSi: MN) after thermal annealing between 300 and 1,000 degrees C have been investigated by secondary ion mass spectroscopic technique. The motivation behind our study comes from recent report of strong magnetic ordering up to 400 K of Mn(+) implanted silicon samples reported by Bolduc et al. (Phys Rev B 71: 033302, 2005). Our silicon substrates were implanted with 160 keV Mn(+) ion to a dose of 1 x 10(16) cm(-2) at either room temperature or at 340 degrees C. The Mn profiles after annealing above 900 degrees C showed multiple concentration peaks for the 340 degrees C implanted samples, but not for the samples implanted at room temperature. We also carried out cross sectional TEM and ferromagnetic resonance measurements to correlate the micro-structural and magnetization data with the Mn depth profile obtained by SIMS.

Journal Title

Journal of Materials Science-Materials in Electronics

Volume

19

Publication Date

1-1-2008

Document Type

Article

First Page

S263

Last Page

S268

WOS Identifier

WOS:000260288100052

ISSN

0957-4522

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