Photoluminescence from RF sputtered SiCBN thin films

    Authors

    A. Vijayakumar; A. Warren; R. Todi;K. Sundaram

    Comments

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    Abstract

    Silicon carbon boron nitride (SiCBN) thin films were synthesized by reactive co-sputtering of silicon carbide (SiC) and boron nitride (BN) targets. As-deposited samples show distinct photoluminescence (PL) peaks at 465, 483 and 497 nm. The films were annealed in dry oxygen ambient at different temperatures to investigate the effect of annealing on film properties. Subsequent measurements on the annealed samples show diminished PL peak intensities. X-ray diffraction analysis shows that the as-deposited films are amorphous in nature and there is no change in the microstructure even after high temperature annealing. Surface characterization of the films by X-ray photoelectron spectroscopy reveals change in chemical composition at different annealing temperatures. Carbon concentrations in the films are sensitive to annealing temperatures and could cause the change in photoluminescence properties.

    Journal Title

    Journal of Materials Science-Materials in Electronics

    Volume

    20

    Issue/Number

    2

    Publication Date

    1-1-2009

    Document Type

    Article

    First Page

    144

    Last Page

    148

    WOS Identifier

    WOS:000262278700009

    ISSN

    0957-4522

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