Morphology Instability of Silicon Nitride Nanowires

    Authors

    H. T. Wang; W. Y. Yang; Z. P. Xie; Y. S. Wang; F. Xing;L. A. An

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Phys. Chem. C

    Keywords

    INDIUM-PHOSPHIDE NANOWIRES; BUILDING-BLOCKS; NANOBELTS; SHAPE; PHOTOLUMINESCENCE; BETA-SI3N4; PYROLYSIS; CRYSTALS; DEVICES; SENSORS; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, ; Multidisciplinary

    Abstract

    We report that cylinder-shaped Si(3)N(4) nanowires are not stable and can gradually transform into nanobelts via surface diffusion during high-temperature annealing. We demonstrate that such instability is driven by the requirements for reducing overall surface energy. The resultant nanobelts have the same width-to-thickness ratio, suggesting a stable morphology. A model in terms of surface energy is proposed to explain the formation of such stable morphology, which agrees well with experimental results. Our result suggests that instability could be a limiting factor for high-temperature applications of ID nanostructures.

    Journal Title

    Journal of Physical Chemistry C

    Volume

    113

    Issue/Number

    15

    Publication Date

    1-1-2009

    Document Type

    Letter

    Language

    English

    First Page

    5902

    Last Page

    5905

    WOS Identifier

    WOS:000265030200004

    ISSN

    1932-7447

    Share

    COinS