Title

Morphology Instability of Silicon Nitride Nanowires

Authors

Authors

H. T. Wang; W. Y. Yang; Z. P. Xie; Y. S. Wang; F. Xing;L. A. An

Comments

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Abbreviated Journal Title

J. Phys. Chem. C

Keywords

INDIUM-PHOSPHIDE NANOWIRES; BUILDING-BLOCKS; NANOBELTS; SHAPE; PHOTOLUMINESCENCE; BETA-SI3N4; PYROLYSIS; CRYSTALS; DEVICES; SENSORS; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, ; Multidisciplinary

Abstract

We report that cylinder-shaped Si(3)N(4) nanowires are not stable and can gradually transform into nanobelts via surface diffusion during high-temperature annealing. We demonstrate that such instability is driven by the requirements for reducing overall surface energy. The resultant nanobelts have the same width-to-thickness ratio, suggesting a stable morphology. A model in terms of surface energy is proposed to explain the formation of such stable morphology, which agrees well with experimental results. Our result suggests that instability could be a limiting factor for high-temperature applications of ID nanostructures.

Journal Title

Journal of Physical Chemistry C

Volume

113

Issue/Number

15

Publication Date

1-1-2009

Document Type

Letter

Language

English

First Page

5902

Last Page

5905

WOS Identifier

WOS:000265030200004

ISSN

1932-7447

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