Optical Absorption in Polymer-Derived Amorphous Silicon Oxycarbonitrides

Authors

    Authors

    Y. S. Wang; T. Jiang; L. G. Zhang;L. N. An

    Comments

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    Abbreviated Journal Title

    J. Am. Ceram. Soc.

    Keywords

    ALPHA-SI-H; ELECTRICAL-CONDUCTIVITY; CARBONITRIDE CERAMICS; HIGH-TEMPERATURE; SEMICONDUCTORS; PIEZORESISTIVITY; SYSTEMS; Materials Science, Ceramics

    Abstract

    Three amorphous silicon oxycarbonitrides are prepared by thermal decomposition of a polymeric precursor at different temperatures. The optical absorption spectra of these materials are measured over a wide range of excitation energies from 0.4 to 5.0 eV. The spectra are analyzed using theoretical models. Two absorption transitions are identified between the deep defect energy level and the delocalized conduction band and between the two delocalized bands. It is found that the band gaps measured decrease with increasing pyrolysis temperature. The results obtained are discussed.

    Journal Title

    Journal of the American Ceramic Society

    Volume

    92

    Issue/Number

    12

    Publication Date

    1-1-2009

    Document Type

    Article

    Language

    English

    First Page

    3111

    Last Page

    3113

    WOS Identifier

    WOS:000272129400050

    ISSN

    0002-7820

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