Title

Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors

Authors

Authors

H. Wong; Y. Fu; J. J. Liou;Y. Yue

Abstract

Hot-carrier reliability and drain breakdown characteristics of multi-finger short channel MOS transistors are studied in derail. Several abnormal characteristics were observed. With the aid of numerical simulation, we found that the shared drain and source regions for adjacent gate fingers can lead to current crowding and result in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would result in the significant hot-carrier induced transconductance degradation as well as remarkable drain breakdown voltage lowering. (C) 2008 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

49

Issue/Number

1

Publication Date

1-1-2009

Document Type

Article

First Page

13

Last Page

16

WOS Identifier

WOS:000263208400003

ISSN

0026-2714

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