Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models

    Authors

    X. C. Cao; J. McMacken; K. Stiles; P. Layman; J. J. Liou; A. Ortiz-Conde;S. Moinian

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper focuses on the comparison of the VBIC and Gummel-Poon models-under the de operations. The extraction and optimization procedure coded in S+ statistical language and required for VBIC simulation is also developed and presented.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    47

    Issue/Number

    2

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    427

    Last Page

    433

    WOS Identifier

    WOS:000085344800026

    ISSN

    0018-9383

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