Authors

L. Chernyak; A. Osinsky; G. Nootz; A. Schulte; J. Jasinski; M. Benamara; Z. Liliental-Weber; D. C. Look;R. J. Molnar

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

DIFFUSION LENGTH; GALLIUM NITRIDE; RECOMBINATION; GROWTH; LAYER; Physics, Applied

Abstract

Electron beam and optical depth profiling of thick (5.5-64 mu m) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 mu m, at a distance of about 5 mu m from the GaN/sapphire interface, to 0.63 mu m at the GaN surface, for a 36-mu m-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM.

Journal Title

Applied Physics Letters

Volume

77

Issue/Number

17

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

2695

Last Page

2697

WOS Identifier

WOS:000089867900023

ISSN

0003-6951

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