n- and p-type post-growth self-doping of CdTe single crystals

    Authors

    V. Lyahovitskaya; L. Chernyak; J. Greenberg; L. Kaplan;D. Cahen

    Comments

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    Abbreviated Journal Title

    J. Cryst. Growth

    Keywords

    CdTe; self-doping; point defects; PHASE; Crystallography; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    Careful analysis of the Cd-Te P-T-X phase diagram, allows us to prepare conducting p- and n-type CdTe, by manipulating the native defect equilibria only, without resorting to external dopants. Quenching of CdTe, following its annealing in Te atmosphere at 350-550 degrees C, leads to p-type conductivity with hole concentrations of similar to 2 x 10(16) cm(-3) Slow cooling of the samples, after 550 degrees C annealing in Te atmosphere, increases the hole concentration by one order of magnitude, as compared to quenching from the same temperature. We explain this increase by the defect reaction between donors V-Te and Te-i. Annealing in Cd atmosphere in the 350-550 degrees C temperature range leads, in contrast to the annealing in Te atmosphere, to n-type conductivity with electron concentrations of similar to 2 x 10(16) cm(-3). We ascribe this to annihilation of V-Cd as a result of Cd-i diffusion. (C) 2000 Elsevier Science B.V. All rights reserved.

    Journal Title

    Journal of Crystal Growth

    Volume

    214

    Publication Date

    1-1-2000

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1155

    Last Page

    1157

    WOS Identifier

    WOS:000087873200241

    ISSN

    0022-0248

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