Title

Enhancement of minority carrier transport in forward biased GaN p-n junction

Authors

Authors

L. Chernyak; G. Nootz;A. Osinsky

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Electron. Lett.

Keywords

DIFFUSION LENGTH; Engineering, Electrical & Electronic

Abstract

Forward bias application to a GaN p-n junction (current density similar to 12A/cm(2)) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial p-n structure. The effect persists for several days, and is likely associated with electron injection-induced charging of Mg-related deep levels in p-type GaN.

Journal Title

Electronics Letters

Volume

37

Issue/Number

14

Publication Date

1-1-2001

Document Type

Article

DOI Link

http://dx.doi.org/10.1049/el:20010605

Language

English

First Page

922

Last Page

923

WOS Identifier

WOS:000169821800039

ISSN

0013-5194

Recommended Citation

"Enhancement of minority carrier transport in forward biased GaN p-n junction" (2001). Faculty Bibliography 2000s. 2534.
https://stars.library.ucf.edu/facultybib2000/2534