Enhancement of minority carrier transport in forward biased GaN p-n junction

    Authors

    L. Chernyak; G. Nootz;A. Osinsky

    Comments

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    Abbreviated Journal Title

    Electron. Lett.

    Keywords

    DIFFUSION LENGTH; Engineering, Electrical & Electronic

    Abstract

    Forward bias application to a GaN p-n junction (current density similar to 12A/cm(2)) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial p-n structure. The effect persists for several days, and is likely associated with electron injection-induced charging of Mg-related deep levels in p-type GaN.

    Journal Title

    Electronics Letters

    Volume

    37

    Issue/Number

    14

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    922

    Last Page

    923

    WOS Identifier

    WOS:000169821800039

    ISSN

    0013-5194

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