Empirical reliability modeling for 0.18-mu m MOS devices

    Authors

    Z. Cui; J. J. Liou; Y. Yue;J. Vinson

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    MOSFET; time-dependent degradation law; reliability; lifetime prediction; DEGRADATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    This paper presents a simple yet effective approach to modeling empirically the 0.18-mum MOS reliability. Short-term stress data are first measured, and the well-known power law is used to project the MOS long-term degradation and lifetime. These results are then used as the basis for the development of an empirical model to predict the MOS lifetime as a function of drain voltage and channel length. Our study focuses on the worst-case stress condition, and both the linear and saturation operations are considered in the modeling. Very good agreement between the measurements and model calculations has been demonstrated. (C) 2003 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    47

    Issue/Number

    9

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    1515

    Last Page

    1522

    WOS Identifier

    WOS:000184014700015

    ISSN

    0038-1101

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