Title

An electrostatic discharge failure mechanism in semiconductor devices, with applications to electrostatic discharge measurements using transmission line pulsing technique

Authors

Authors

J. C. Lee; A. Hoque; G. D. Croft; J. J. Liou; R. Young;J. C. Bernier

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (called the human body model, HBM). In particular, the study provides simulation and experimental results to determine the main mechanism governing the Failure of MOS devices subjected to the HEM stress. Based on this mechanism, the correct pulse needed to measure the HEM ESD characteristics using the transmission line pulsing technique is also determined and recommended. (C) 2000 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

44

Issue/Number

10

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

1771

Last Page

1781

WOS Identifier

WOS:000165065100009

ISSN

0038-1101

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