An electrostatic discharge failure mechanism in semiconductor devices, with applications to electrostatic discharge measurements using transmission line pulsing technique

    Authors

    J. C. Lee; A. Hoque; G. D. Croft; J. J. Liou; R. Young;J. C. Bernier

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (called the human body model, HBM). In particular, the study provides simulation and experimental results to determine the main mechanism governing the Failure of MOS devices subjected to the HEM stress. Based on this mechanism, the correct pulse needed to measure the HEM ESD characteristics using the transmission line pulsing technique is also determined and recommended. (C) 2000 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    44

    Issue/Number

    10

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    1771

    Last Page

    1781

    WOS Identifier

    WOS:000165065100009

    ISSN

    0038-1101

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