An improved substrate current model for deep submicron MOSFETs

    Authors

    W. Li; J. S. Yuan; S. Chetlur; J. Zhou;A. S. Oates

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulation, is developed. The present model predictions are compared with experimental data and the BSIM3V3 model. A good agreement between the present model predictions and experimental data is obtained. (C) 2000 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    44

    Issue/Number

    11

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    1985

    Last Page

    1988

    WOS Identifier

    WOS:000165546700013

    ISSN

    0038-1101

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