Title

Comparative study of CdS thin films deposited by single, continuous, and multiple dip chemical processes

Authors

Authors

I. O. Oladeji; L. Chow; J. R. Liu; W. K. Chu; A. N. P. Bustamante; C. Fredricksen;A. F. Schulte

Comments

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Abbreviated Journal Title

Thin Solid Films

Keywords

CdS thin films; chemical bath deposition; BATH DEPOSITION; GROWTH; SPECTROSCOPY; TRANSITION; MECHANISM; INSITU; CELLS; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

Abstract

We have used Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman, and photoconductivity to characterize CdS thin films grown by single, continuous, and multiple dip chemical processes. XRD has further shown, without ambiguity, that grown CdS films, independent of the process, in an almost homogeneous reaction free basic aqueous bath have a zincblende crystal structure where reflections from (111), (200), (220), and (311) planes are clearly identified. RES, Raman, and photoconductivity confirm the high stoichiometry and excellent structural properties with low optically active trap state density of single and continuous dip CdS films. However, they collectively suggest that multiple dip CdS films suffer from defects that act as carrier traps and lead to prolong photoconductivity decay in these films. (C) 2000 Elsevier Science S.A. All rights reserved.

Journal Title

Thin Solid Films

Volume

359

Issue/Number

2

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

154

Last Page

159

WOS Identifier

WOS:000084847700007

ISSN

0040-6090

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