Comparative study of CdS thin films deposited by single, continuous, and multiple dip chemical processes

    Authors

    I. O. Oladeji; L. Chow; J. R. Liu; W. K. Chu; A. N. P. Bustamante; C. Fredricksen;A. F. Schulte

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Thin Solid Films

    Keywords

    CdS thin films; chemical bath deposition; BATH DEPOSITION; GROWTH; SPECTROSCOPY; TRANSITION; MECHANISM; INSITU; CELLS; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

    Abstract

    We have used Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman, and photoconductivity to characterize CdS thin films grown by single, continuous, and multiple dip chemical processes. XRD has further shown, without ambiguity, that grown CdS films, independent of the process, in an almost homogeneous reaction free basic aqueous bath have a zincblende crystal structure where reflections from (111), (200), (220), and (311) planes are clearly identified. RES, Raman, and photoconductivity confirm the high stoichiometry and excellent structural properties with low optically active trap state density of single and continuous dip CdS films. However, they collectively suggest that multiple dip CdS films suffer from defects that act as carrier traps and lead to prolong photoconductivity decay in these films. (C) 2000 Elsevier Science S.A. All rights reserved.

    Journal Title

    Thin Solid Films

    Volume

    359

    Issue/Number

    2

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    154

    Last Page

    159

    WOS Identifier

    WOS:000084847700007

    ISSN

    0040-6090

    Share

    COinS