A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices

    Authors

    Rvvvj Rao; T. C. Chong; L. S. Tan; W. S. Lau;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microw. Opt. Technol. Lett.

    Keywords

    molecular beam epitaxy (MBE); low-temperature (LT)-grown GaAs and; Al0.3Ga0.7As; MISFETs; quasianalytical model; ELECTRON-DRIFT VELOCITY; LOW-TEMPERATURE; FIELD; INSULATOR; VOLTAGE; MESFETS; LAYERS; Engineering, Electrical & Electronic; Optics

    Abstract

    This paper describes a quasianalytical model for the calculation of the current-voltage characteristics of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's equation, the cull ent continuity equation, and the Chang-Fetterman velocity-field equations have been solved analytically. When the devices are operating in the linear region and the knee region, the one-dimensional Poisson equation is considered. When the devices are in the saturation regime, the two-dimensional Poisson equation is solved analytically. The resulting output current-voltage characteristics are in good agreement with experimental data. This model has been used to predict the RF performance and RF power capability of these MISFETs. (C) 2000 John Wiley & Sons, Inc.

    Journal Title

    Microwave and Optical Technology Letters

    Volume

    27

    Issue/Number

    1

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    61

    Last Page

    66

    WOS Identifier

    WOS:000088960900018

    ISSN

    0895-2477

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