Title

A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices

Authors

Authors

Rvvvj Rao; T. C. Chong; L. S. Tan; W. S. Lau;J. J. Liou

Comments

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Abbreviated Journal Title

Microw. Opt. Technol. Lett.

Keywords

molecular beam epitaxy (MBE); low-temperature (LT)-grown GaAs and; Al0.3Ga0.7As; MISFETs; quasianalytical model; ELECTRON-DRIFT VELOCITY; LOW-TEMPERATURE; FIELD; INSULATOR; VOLTAGE; MESFETS; LAYERS; Engineering, Electrical & Electronic; Optics

Abstract

This paper describes a quasianalytical model for the calculation of the current-voltage characteristics of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's equation, the cull ent continuity equation, and the Chang-Fetterman velocity-field equations have been solved analytically. When the devices are operating in the linear region and the knee region, the one-dimensional Poisson equation is considered. When the devices are in the saturation regime, the two-dimensional Poisson equation is solved analytically. The resulting output current-voltage characteristics are in good agreement with experimental data. This model has been used to predict the RF performance and RF power capability of these MISFETs. (C) 2000 John Wiley & Sons, Inc.

Journal Title

Microwave and Optical Technology Letters

Volume

27

Issue/Number

1

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

61

Last Page

66

WOS Identifier

WOS:000088960900018

ISSN

0895-2477

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