Title

New simple procedure to determine the threshold voltage of MOSFETs

Authors

Authors

F. J. G. Sanchez; A. Ortiz-Conde; G. De Mercato; J. A. Salcedo; J. J. Liou;Y. Yue

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-strong inversion transition region of MOSFETs. It uses an auxiliary operator that involves integration of the drain current as a function of gate voltage. Tests show that the procedure produces results comparable to conventional methods. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

44

Issue/Number

4

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

673

Last Page

675

WOS Identifier

WOS:000086007600014

ISSN

0038-1101

Recommended Citation

"New simple procedure to determine the threshold voltage of MOSFETs" (2000). Faculty Bibliography 2000s. 2784.
https://stars.library.ucf.edu/facultybib2000/2784