New simple procedure to determine the threshold voltage of MOSFETs

    Authors

    F. J. G. Sanchez; A. Ortiz-Conde; G. De Mercato; J. A. Salcedo; J. J. Liou;Y. Yue

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-strong inversion transition region of MOSFETs. It uses an auxiliary operator that involves integration of the drain current as a function of gate voltage. Tests show that the procedure produces results comparable to conventional methods. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    44

    Issue/Number

    4

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    673

    Last Page

    675

    WOS Identifier

    WOS:000086007600014

    ISSN

    0038-1101

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