Validation of bulk-charge effect parameter extraction in MOSFETs

    Authors

    F. J. G. Sanchez; A. Ortiz-Conde; J. A. Salcedo; J. Muci; M. Estrada; A. Cerdeira; J. J. Liou;Y. Yue

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    CHANNEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Our recently proposed method to extract the bulk-charge effect parameter in MOSFETs is scrutinized by studying SOI devices, a-Si:H TFTs and short- as well as long-channel bulk MOSFETs. The method requires measuring the drain current as a function of gate voltage at two small values of drain voltage chosen in the linear region of operation, (C) 2000 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    40

    Issue/Number

    6

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    941

    Last Page

    945

    WOS Identifier

    WOS:000087640800005

    ISSN

    0026-2714

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