Title

Deposition and optical studies of silicon carbide nitride thin films

Authors

Authors

K. B. Sundaram;J. Alizadeh

Comments

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Abbreviated Journal Title

Thin Solid Films

Keywords

deposition process; infrared spectroscopy; optical properties; silicon; carbide; SIC-H FILMS; HYDROGEN CONTENT; NITROGEN; IMPLANTATION; SPECTROSCOPY; ABSORPTION; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

Abstract

Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r.f.) sputtering using SiC target and nitrogen as the reactant gas. Deposition rates are studied as a function of deposition pressures and argon-nitrogen flow ratios. The optical absorption studies indicated the band edge shifting of the films when the nitrogen ratios are increased during deposition. Fourier transform infrared spectroscopy (FTIR) analysis on the films indicated several stretching modes corresponding to SiC, SiN and CN compositions. (C) 2000 Elsevier Science S.A. All rights reserved.

Journal Title

Thin Solid Films

Volume

370

Issue/Number

1-2

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

151

Last Page

154

WOS Identifier

WOS:000087942200024

ISSN

0040-6090

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