Deposition and optical studies of silicon carbide nitride thin films

    Authors

    K. B. Sundaram;J. Alizadeh

    Comments

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    Abbreviated Journal Title

    Thin Solid Films

    Keywords

    deposition process; infrared spectroscopy; optical properties; silicon; carbide; SIC-H FILMS; HYDROGEN CONTENT; NITROGEN; IMPLANTATION; SPECTROSCOPY; ABSORPTION; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

    Abstract

    Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r.f.) sputtering using SiC target and nitrogen as the reactant gas. Deposition rates are studied as a function of deposition pressures and argon-nitrogen flow ratios. The optical absorption studies indicated the band edge shifting of the films when the nitrogen ratios are increased during deposition. Fourier transform infrared spectroscopy (FTIR) analysis on the films indicated several stretching modes corresponding to SiC, SiN and CN compositions. (C) 2000 Elsevier Science S.A. All rights reserved.

    Journal Title

    Thin Solid Films

    Volume

    370

    Issue/Number

    1-2

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    151

    Last Page

    154

    WOS Identifier

    WOS:000087942200024

    ISSN

    0040-6090

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