The effect of nitrogen on the chemistry of sputter-deposited SiCxNy films

    Authors

    Z. Alizadeh; K. B. Sundaram;S. Seal

    Abbreviated Journal Title

    Appl. Surf. Sci.

    Keywords

    silicon carbide; sputtering; XPS; AFM; SILICON-CARBIDE; THIN-FILMS; SPECTROSCOPY; SURFACE; Chemistry, Physical; Materials Science, Coatings & Films; Physics, ; Applied; Physics, Condensed Matter

    Abstract

    Thin films of silicon carbide nitride (SiCxNy) were deposited in an r.f. magnetron sputtering system using a SiC target. Films of different compositions were deposited by varying the ratios of argon and nitrogen in the sputtering ambient. X-ray photoelectron spectroscopy and atomic force microscopy studies on the deposited films indicated that the chemical states as well as the surface roughness are highly sensitive to the nitrogen ratios during sputtering. (C) 2001 Elsevier Science B.V. All rights reserved.

    Journal Title

    Applied Surface Science

    Volume

    183

    Issue/Number

    3-4

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    270

    Last Page

    277

    WOS Identifier

    WOS:000172506500013

    ISSN

    0169-4332

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