Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation

    Authors

    Y. Tan; J. J. Liou; J. Gessner;F. Schwierz

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    reliability analysis; heterojunction bipolar transistor; device; simulation; DEGRADATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studied based on two-dimensional device simulation. The main objective is to identify the types and locations of defects in the HBT which are responsible for different base current instabilities observed experimentally in post-stress HBTs. Pre- and post-stress measurement data reported in the literature are included to demonstrate the usefulness of the analysis. (C) 2001 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    45

    Issue/Number

    5

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    727

    Last Page

    734

    WOS Identifier

    WOS:000169397100016

    ISSN

    0038-1101

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