Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation
Abbreviated Journal Title
reliability analysis; heterojunction bipolar transistor; device; simulation; DEGRADATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studied based on two-dimensional device simulation. The main objective is to identify the types and locations of defects in the HBT which are responsible for different base current instabilities observed experimentally in post-stress HBTs. Pre- and post-stress measurement data reported in the literature are included to demonstrate the usefulness of the analysis. (C) 2001 Elsevier Science Ltd. All rights reserved.
"Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation" (2001). Faculty Bibliography 2000s. 2973.