Experimental evaluation of device degradation subject to oxide soft breakdown

    Authors

    J. Zhang; J. S. Yuan; Y. Ma; Y. Chen;A. S. Oates

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    soft breakdown; hard breakdown; stress-induced leakage currents; direct; current measurement technique; hot carrier stress; INTERFACE TRAPS; DEFECT GENERATION; MOS-TRANSISTORS; GATE; LAYERS; SILICON; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Deep submicron MOS transistors subject to oxide soft breakdown (SBD) are evaluated. The experimental results demonstrate that the threshold voltage and mobility degrade after SBD as evidenced by shifts of oxide trap charges and interface states. Hot electron injection triggers more SBD occurrences as shown in the gate and substrate currents after stress. (C) 2001 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    45

    Issue/Number

    9

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    1521

    Last Page

    1524

    WOS Identifier

    WOS:000171362300001

    ISSN

    0038-1101

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