Title

Experimental evaluation of device degradation subject to oxide soft breakdown

Authors

Authors

J. Zhang; J. S. Yuan; Y. Ma; Y. Chen;A. S. Oates

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

soft breakdown; hard breakdown; stress-induced leakage currents; direct; current measurement technique; hot carrier stress; INTERFACE TRAPS; DEFECT GENERATION; MOS-TRANSISTORS; GATE; LAYERS; SILICON; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Deep submicron MOS transistors subject to oxide soft breakdown (SBD) are evaluated. The experimental results demonstrate that the threshold voltage and mobility degrade after SBD as evidenced by shifts of oxide trap charges and interface states. Hot electron injection triggers more SBD occurrences as shown in the gate and substrate currents after stress. (C) 2001 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

45

Issue/Number

9

Publication Date

1-1-2001

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0038-1101(01)00252-0

Language

English

First Page

1521

Last Page

1524

WOS Identifier

WOS:000171362300001

ISSN

0038-1101

Recommended Citation

"Experimental evaluation of device degradation subject to oxide soft breakdown" (2001). Faculty Bibliography 2000s. 3016.
https://stars.library.ucf.edu/facultybib2000/3016