Experimental evaluation of device degradation subject to oxide soft breakdown
Abbreviated Journal Title
soft breakdown; hard breakdown; stress-induced leakage currents; direct; current measurement technique; hot carrier stress; INTERFACE TRAPS; DEFECT GENERATION; MOS-TRANSISTORS; GATE; LAYERS; SILICON; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Deep submicron MOS transistors subject to oxide soft breakdown (SBD) are evaluated. The experimental results demonstrate that the threshold voltage and mobility degrade after SBD as evidenced by shifts of oxide trap charges and interface states. Hot electron injection triggers more SBD occurrences as shown in the gate and substrate currents after stress. (C) 2001 Elsevier Science Ltd. All rights reserved.
"Experimental evaluation of device degradation subject to oxide soft breakdown" (2001). Faculty Bibliography 2000s. 3016.