An improved model for substrate current of submicron MOSFETs

    Authors

    X. Gao; J. J. Liou; J. Bernier;G. Croft

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    MOS device; substrate current; electrostatic discharge; impact; ionization; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliability of MOSFET. This paper develops an improved and analytic model for such a Current based on the length of and maximum electric field in the high-field region near the drain junction. The present model is compared against several existing substrate current models reported in the literature. and results from device simulation and measurements are also included in support of the model development. (C) 2002 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    46

    Issue/Number

    9

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    1395

    Last Page

    1398

    WOS Identifier

    WOS:000177493800021

    ISSN

    0038-1101

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