A physics-based model for the substrate resistance of MOSFETs

    Authors

    X. F. Gao; J. J. Liou; A. Ortiz-Conde; J. Bernier;G. Croft

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    substrate resistance; MOSFETs; modeling; impact ionization; electrostatic discharge; BREAKDOWN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A compact and accurate model for the substrate resistance is essential and critical for the characterization of MOSFET operation, particularly for the case of relatively large drain current and sizeable substrate current. This paper develops such a model taking into account the effects of device geometry, impact ionization, and conductivity modulation. Comparison of the present and existing models is given, and results obtained from device simulation are included in support of the model. (C) 2002 Published by Elsevier Science Ltd.

    Journal Title

    Solid-State Electronics

    Volume

    46

    Issue/Number

    6

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    853

    Last Page

    857

    WOS Identifier

    WOS:000175817800011

    ISSN

    0038-1101

    Share

    COinS