Title
A physics-based model for the substrate resistance of MOSFETs
Abbreviated Journal Title
Solid-State Electron.
Keywords
substrate resistance; MOSFETs; modeling; impact ionization; electrostatic discharge; BREAKDOWN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
A compact and accurate model for the substrate resistance is essential and critical for the characterization of MOSFET operation, particularly for the case of relatively large drain current and sizeable substrate current. This paper develops such a model taking into account the effects of device geometry, impact ionization, and conductivity modulation. Comparison of the present and existing models is given, and results obtained from device simulation are included in support of the model. (C) 2002 Published by Elsevier Science Ltd.
Journal Title
Solid-State Electronics
Volume
46
Issue/Number
6
Publication Date
1-1-2002
Document Type
Article
Language
English
First Page
853
Last Page
857
WOS Identifier
ISSN
0038-1101
Recommended Citation
"A physics-based model for the substrate resistance of MOSFETs" (2002). Faculty Bibliography 2000s. 3210.
https://stars.library.ucf.edu/facultybib2000/3210