Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs

    Authors

    J. J. Liou; R. Shireen; A. Ortiz-Conde; F. J. G. Sanchez; A. Cerdeira; X. Gao; X. C. Zou;C. S. Ho

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    IV CHARACTERISTICS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Ion implantation. followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the subthreshold behavior based on results obtained from two-dimensional device simulation. An empirical expression is also suggested to describe the subthreshold current including the depletion effect. (C) 2002 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    42

    Issue/Number

    3

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    343

    Last Page

    347

    WOS Identifier

    WOS:000175318700005

    ISSN

    0026-2714

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