Title

Statistical modeling of MOS devices for parametric yield prediction

Authors

Authors

J. J. Liou; Q. Zhang; J. McMacken; J. R. Thomson; K. Stiles;P. Layman

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

INTEGRATED-CIRCUITS; TRANSISTORS; METHODOLOGY; MISMATCH; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

In the manufacturing of VLSI circuits, engineering designs should take into consideration random variations arising from processing, In this paper, statistical modeling of MOS devices is reviewed, and effective and practical models are developed to predict the performance spread (i.e., parametric yield) of MOS devices and circuits due to the process variations. To illustrate their applications, the models are applied to the 0.25 mum CMOS technology, and measured data are included in support of the model calculations. (C) 2002 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

42

Issue/Number

4-5

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

787

Last Page

795

WOS Identifier

WOS:000176465800026

ISSN

0026-2714

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