Title
Quantitative analysis of physical and chemical changes in CMP polyurethane pad surfaces
Abbreviated Journal Title
Mater. Charact.
Keywords
polyurethane; CMP PADS; ATR/FTIR; surface topography; white light; interferometry; Materials Science, Multidisciplinary; Metallurgy & Metallurgical; Engineering; Materials Science, Characterization & Testing
Abstract
Polishing pads play a key role in chemical-mechanical polishing (CMP), which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. In service, chemical and mechanical changes in a polishing pad are expected to have a significant impact on the pad's CMP performance. Scanning electron microscopy (SEM) showed changes in the pore geometry on the CMP pad surface after use. The average height of the roughness between the pores of the polishing pad was measured using white light interferometry (WLI). Attenuated total reflectance Fourier Transform Infrared (ATR/FTIR) method was found to provide a novel opportunity for the nondestructive surface analysis of pad materials. Results of an ATR/IR microscopy study that evaluated the extent of chemical degradation of pad materials both before and after polishing cycle are presented. The infrared results identified that the changes in, chemical state of used pad materials, specifically for CO and C-O-C infrared stretching bands, were a surface phenomenon. (C) 2002 Published by Elsevier Science Inc.
Journal Title
Materials Characterization
Volume
49
Issue/Number
1
Publication Date
1-1-2002
Document Type
Article
Language
English
First Page
35
Last Page
44
WOS Identifier
ISSN
1044-5803
Recommended Citation
"Quantitative analysis of physical and chemical changes in CMP polyurethane pad surfaces" (2002). Faculty Bibliography 2000s. 3337.
https://stars.library.ucf.edu/facultybib2000/3337
Comments
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