Electron backscattering diffraction investigation of focused ion beam surfaces

    Authors

    T. L. Matteson; S. W. Schwarz; E. C. Houge; B. W. Kempshall;L. A. Giannuzzi

    Comments

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    Abbreviated Journal Title

    J. Electron. Mater.

    Keywords

    FIB; EBSD; EBSP; Cu; Si; FIB damage; amorphous; TRIM; image quality; dual beam; TEM SPECIMEN PREPARATION; LIFT-OUT; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

    Abstract

    A focused ion beam (FIB) instrument has been used to mill surfaces in single-crystal Si and single-crystal Cu for subsequent electron backscattering diffraction (EBSD) analysis. The FIB cuts were performed using a 30 keV and a 5 keV Ga+ ion beam at a stage tilt of 20 to provide a readily obtainable 70degrees surface for direct EBSD investigation in a scanning electron microscope (SEM). The quality of the patterns is related to the amount of FIB damage induced in the Cu and Si. These or similar methods should be directly transferable to a FIB/SEM dual beam instrument equipped with an EBSD detector.

    Journal Title

    Journal of Electronic Materials

    Volume

    31

    Issue/Number

    1

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    33

    Last Page

    39

    WOS Identifier

    WOS:000173641900006

    ISSN

    0361-5235

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