Title

Electron backscattering diffraction investigation of focused ion beam surfaces

Authors

Authors

T. L. Matteson; S. W. Schwarz; E. C. Houge; B. W. Kempshall;L. A. Giannuzzi

Comments

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Abbreviated Journal Title

J. Electron. Mater.

Keywords

FIB; EBSD; EBSP; Cu; Si; FIB damage; amorphous; TRIM; image quality; dual beam; TEM SPECIMEN PREPARATION; LIFT-OUT; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

Abstract

A focused ion beam (FIB) instrument has been used to mill surfaces in single-crystal Si and single-crystal Cu for subsequent electron backscattering diffraction (EBSD) analysis. The FIB cuts were performed using a 30 keV and a 5 keV Ga+ ion beam at a stage tilt of 20 to provide a readily obtainable 70degrees surface for direct EBSD investigation in a scanning electron microscope (SEM). The quality of the patterns is related to the amount of FIB damage induced in the Cu and Si. These or similar methods should be directly transferable to a FIB/SEM dual beam instrument equipped with an EBSD detector.

Journal Title

Journal of Electronic Materials

Volume

31

Issue/Number

1

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

33

Last Page

39

WOS Identifier

WOS:000173641900006

ISSN

0361-5235

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