A review of recent MOSFET threshold voltage extraction methods

    Authors

    A. Ortiz-Conde; F. J. G. Sanchez; J. J. Liou; A. Cerdeira; M. Estrada;Y. Yue

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    DIFFERENCE OPERATOR METHOD; EFFECTIVE CHANNEL-LENGTH; PARAMETER; EXTRACTION; SERIES RESISTANCE; ACCURATE METHOD; RATIO METHOD; TRANSISTORS; DEFINITION; MODEL; REGION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The threshold voltage Value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics. The assessment focuses specially on single-crystal bulk MOSFETs. It includes 11 different methods that use the transfer characteristics measured under linear regime operation conditions. Additionally two methods for threshold voltage extraction under saturation conditions and one specifically suitable for non-crystalline thin film MOSFETs are also included. Practical implementation of the several methods presented is illustrated and their performances are compared under the same challenging conditions: the measured characteristics of an enhancement-mode n-channel single-crystal silicon bulk MOSFET with state-of-the-art short-channel length, and an experimental n-channel a-Si:H thin film MOSFET. (C) 2002 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    42

    Issue/Number

    4-5

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    583

    Last Page

    596

    WOS Identifier

    WOS:000176465800011

    ISSN

    0026-2714

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