A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

    Authors

    F. J. G. Sanchez; A. Ortiz-Conde; A. Cerdeira; M. Estrada; D. Flandre;J. J. Liou

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    mobility degradation; parameter extraction; series resistance; SOI; MOSFETs; threshold voltage; velocity saturation; CURRENT-CONDUCTANCE METHOD; PARAMETER EXTRACTION; THRESHOLD VOLTAGE; CHANNEL-LENGTH; DRAIN; FRESH; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Free-carrier mobility degradation in the channel and drain/source series resistance are two important parameters limiting the performance of MOS devices. In this paper, we present a method to extract these parameters from the drain current versus gate voltage characteristics of fully-depleted (FD) SOI MOSFETs operating in the saturation region. This method is developed based on an integration function which reduces errors associated with the extraction procedure and on the d.c. characteristics of MOS devices having several different channel lengths. Simulation results and measured data of FD SOI MOSFETs are used to test and verify the method developed.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    49

    Issue/Number

    1

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    82

    Last Page

    88

    WOS Identifier

    WOS:000173338000014

    ISSN

    0018-9383

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