Title

A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

Authors

Authors

F. J. G. Sanchez; A. Ortiz-Conde; A. Cerdeira; M. Estrada; D. Flandre;J. J. Liou

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

mobility degradation; parameter extraction; series resistance; SOI; MOSFETs; threshold voltage; velocity saturation; CURRENT-CONDUCTANCE METHOD; PARAMETER EXTRACTION; THRESHOLD VOLTAGE; CHANNEL-LENGTH; DRAIN; FRESH; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Free-carrier mobility degradation in the channel and drain/source series resistance are two important parameters limiting the performance of MOS devices. In this paper, we present a method to extract these parameters from the drain current versus gate voltage characteristics of fully-depleted (FD) SOI MOSFETs operating in the saturation region. This method is developed based on an integration function which reduces errors associated with the extraction procedure and on the d.c. characteristics of MOS devices having several different channel lengths. Simulation results and measured data of FD SOI MOSFETs are used to test and verify the method developed.

Journal Title

Ieee Transactions on Electron Devices

Volume

49

Issue/Number

1

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

82

Last Page

88

WOS Identifier

WOS:000173338000014

ISSN

0018-9383

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