Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system

    Authors

    S. M. Schwarz; B. W. Kempshall; L. A. Giannuzzi;F. A. Stevie

    Abbreviated Journal Title

    Acta Mater.

    Keywords

    SIMS; grain boundary diffusion; Cu(Ni); twist grain boundaries; Materials Science, Multidisciplinary; Metallurgy & Metallurgical; Engineering

    Abstract

    The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10degrees, Sigma5 (36.87degrees), and 45degrees, were measured using the SIMS technique. The average activation energy for grain boundary diffusion, Q(b), was found to be 245 +/- 22, 140 +/- 10, and 102 +/- 15 kJ/mol, for the 10degrees, Sigma5, and 45degrees twist grain boundaries, respectively. The average grain boundary diffusion pre-exponential term, sdeltaD(bo), was found to be 9.6 +/- 1.24 x 10(-9), 1.1 +/- 0.17 X 10(-14), and 1.3 +/- 0.36 x 10(-16) m(3)/S, for the 10degrees, Sigma5, and 45degrees twist grain boundaries, respectively. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

    Journal Title

    Acta Materialia

    Volume

    50

    Issue/Number

    20

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    5079

    Last Page

    5084

    WOS Identifier

    WOS:000179478300011

    ISSN

    1359-6454

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