Title

The effects of oxidation on the optical properties of amorphous SiC films

Authors

Authors

K. B. Sundaram; Z. Alizadeh;L. Chow

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.

Keywords

amorphous silicon carbide films; oxidation; optical properties; SILICON; Materials Science, Multidisciplinary; Physics, Condensed Matter

Abstract

Amorphous silicon carbide films were deposited by the r.f. sputtering technique using a SiC target. The deposited films were annealed in dry oxygen ambient in the temperature range of 400-700 degreesC. Optical absorption studies indicated blue shifting effects as the annealing temperature was increased. (C) 2002 Elsevier Science B.V. All rights reserved.

Journal Title

Materials Science and Engineering B-Solid State Materials for Advanced Technology

Volume

90

Issue/Number

1-2

Publication Date

1-1-2002

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0921-5107(01)00827-3

Language

English

First Page

47

Last Page

49

WOS Identifier

WOS:000174019500010

ISSN

0921-5107

Recommended Citation

"The effects of oxidation on the optical properties of amorphous SiC films" (2002). Faculty Bibliography 2000s. 3497.
https://stars.library.ucf.edu/facultybib2000/3497