The effects of oxidation on the optical properties of amorphous SiC films

    Authors

    K. B. Sundaram; Z. Alizadeh;L. Chow

    Comments

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    Abbreviated Journal Title

    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.

    Keywords

    amorphous silicon carbide films; oxidation; optical properties; SILICON; Materials Science, Multidisciplinary; Physics, Condensed Matter

    Abstract

    Amorphous silicon carbide films were deposited by the r.f. sputtering technique using a SiC target. The deposited films were annealed in dry oxygen ambient in the temperature range of 400-700 degreesC. Optical absorption studies indicated blue shifting effects as the annealing temperature was increased. (C) 2002 Elsevier Science B.V. All rights reserved.

    Journal Title

    Materials Science and Engineering B-Solid State Materials for Advanced Technology

    Volume

    90

    Issue/Number

    1-2

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    47

    Last Page

    49

    WOS Identifier

    WOS:000174019500010

    ISSN

    0921-5107

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