Ferromagnetism and microstructure in Cr implanted p-type (100) silicon

    Authors

    L. J. Gao; L. Chow; R. Vanfleet; K. Jin; Z. H. Zhang; X. F. Duan; B. Xu; B. Y. Zhu; L. X. Cao; X. G. Qiu;B. R. Zhao

    Comments

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    Abbreviated Journal Title

    Solid State Commun.

    Keywords

    Cr; Ion implantation; Anneal; Ferromagnetism; DIFFUSION PROFILES; MN; SI; TEMPERATURE; FILMS; TIO2; Physics, Condensed Matter

    Abstract

    The magnetic properties and microstructure of p-type Si (100) implanted with 1.0 x 10(15) cm(-2) of Cr ions at 200 keV have been investigated by a superconducting quantum interference device (SQUID) magnetometer, scanning electron microscope (SEM) and transmission electron microscopy (TEM). The magnetic hysteresis loops and saturation magnetization of 0.67-0.75 emu/g in a wide temperature range are observed in the as-implanted sample. Annealing of the as-implanted sample modifies the microstructure and therefore weakens the magnetic exchange interaction. TEM observations show that the as-implanted silicon layer is amorphous. After annealing at temperature > = 800 degrees C, the SEM showed that the implanted profile layer became blurred and narrow, the ferromagnetism was weakened, which should have resulted from the re-crystallization of the implanted amorphous layer. These results were further compared with magnetic hysteresis observed in Mn-implanted silicon. (C) 2008 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid State Communications

    Volume

    148

    Issue/Number

    3-4

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    122

    Last Page

    125

    WOS Identifier

    WOS:000260022600009

    ISSN

    0038-1098

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