Hot-carrier and soft-breakdown effects on VCO performance

    Authors

    E. J. Xiao; J. S. Yuan;H. Yang

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Microw. Theory Tech.

    Keywords

    circuit reliability; dielectric breakdown; hot carriers; MOSFETs; phase-locked loops; phase noise; timing jitter; voltage-controlled; oscillators (VCOs); Engineering, Electrical & Electronic

    Abstract

    This paper systematically investigates the hot-carrier- and soft-breakdown-induced performance degradation in A CMOS voltage-controlled oscillator (VCO) used in phase-locked-loop frequency synthesizers. After deriving the closed-form equations to predict phase noise and VCO gain, we rem late VCO RF performance such as phase noise, tuning range, and gain of VCO subject to electrical stress. The circuit degradations predicted by analytical model equations are verified by SpectraRF simulation using parameters extracted from the experimental data of 0.16-mum CMOS. technology. BERT simulation results give VCO performance degradations versus operation time.

    Journal Title

    Ieee Transactions on Microwave Theory and Techniques

    Volume

    50

    Issue/Number

    11

    Publication Date

    1-1-2002

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    2453

    Last Page

    2458

    WOS Identifier

    WOS:000178986000005

    ISSN

    0018-9480

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