The optical signature of electron injection in p-(Al)GaN

    Authors

    W. C. Burdett; O. Lopatiuk; A. Osinsky; S. J. Pearton;L. Chernyak

    Comments

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    Abbreviated Journal Title

    Superlattices Microstruct.

    Keywords

    III nitrides; GaN; electron injection; cathodoluminescence; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; ALGAN/GAN SUPERLATTICES; MG; Physics, Condensed Matter

    Abstract

    Electron injection into p-type (Al)GaN leads to a considerable (several-fold) decrease of the cathodoluminescence intensity at room and elevated temperatures. Cathodoluminescence measurements revealed a slower intensity decrease with increasing sample temperature and allowed an estimate of the activation energy for the effect to be obtained (192-232 meV), which is consistent with the values for Mg-acceptor thermal ionization in (Al)GaN. The electron injection-induced decay of the sample's luminescence which persists for at least several days at similar to300 K is, therefore, attributed to an injected electron trapping on a Mg level in the (Al)GaN forbidden gap. (C) 2004 Elsevier Ltd. All rights reserved.

    Journal Title

    Superlattices and Microstructures

    Volume

    19

    Issue/Number

    1-2

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    55

    Last Page

    62

    WOS Identifier

    WOS:000186834800009

    ISSN

    0749-6036

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