Title

The optical signature of electron injection in p-(Al)GaN

Authors

Authors

W. C. Burdett; O. Lopatiuk; A. Osinsky; S. J. Pearton;L. Chernyak

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Superlattices Microstruct.

Keywords

III nitrides; GaN; electron injection; cathodoluminescence; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; ALGAN/GAN SUPERLATTICES; MG; Physics, Condensed Matter

Abstract

Electron injection into p-type (Al)GaN leads to a considerable (several-fold) decrease of the cathodoluminescence intensity at room and elevated temperatures. Cathodoluminescence measurements revealed a slower intensity decrease with increasing sample temperature and allowed an estimate of the activation energy for the effect to be obtained (192-232 meV), which is consistent with the values for Mg-acceptor thermal ionization in (Al)GaN. The electron injection-induced decay of the sample's luminescence which persists for at least several days at similar to300 K is, therefore, attributed to an injected electron trapping on a Mg level in the (Al)GaN forbidden gap. (C) 2004 Elsevier Ltd. All rights reserved.

Journal Title

Superlattices and Microstructures

Volume

19

Issue/Number

1-2

Publication Date

1-1-2003

Document Type

Article

Language

English

First Page

55

Last Page

62

WOS Identifier

WOS:000186834800009

ISSN

0749-6036

Share

COinS