A new extrapolation method for long-term degradation prediction of deep-submicron MOSFETs

    Authors

    Z. Cui; J. J. Liou;Y. Yue

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    hot carrier effect; lifetime prediction; MOSFET; reliability; RELIABLE LIFETIME PREDICTION; HOT-CARRIER DEGRADATION; LAW; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Time-dependent degradation laws have been widely used to predict the MOS long-term degradation characteristics and lifetime. The existing degradation laws, however, often fail to predict accurately the MOS lifetime if only a relatively small number of stress data points are measured. A simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. Data measured from three different MOS devices are analyzed in support of the model development.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    50

    Issue/Number

    5

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    1398

    Last Page

    1401

    WOS Identifier

    WOS:000184064400034

    ISSN

    0018-9383

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