Title
A new extrapolation method for long-term degradation prediction of deep-submicron MOSFETs
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
hot carrier effect; lifetime prediction; MOSFET; reliability; RELIABLE LIFETIME PREDICTION; HOT-CARRIER DEGRADATION; LAW; Engineering, Electrical & Electronic; Physics, Applied
Abstract
Time-dependent degradation laws have been widely used to predict the MOS long-term degradation characteristics and lifetime. The existing degradation laws, however, often fail to predict accurately the MOS lifetime if only a relatively small number of stress data points are measured. A simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. Data measured from three different MOS devices are analyzed in support of the model development.
Journal Title
Ieee Transactions on Electron Devices
Volume
50
Issue/Number
5
Publication Date
1-1-2003
Document Type
Article
Language
English
First Page
1398
Last Page
1401
WOS Identifier
ISSN
0018-9383
Recommended Citation
"A new extrapolation method for long-term degradation prediction of deep-submicron MOSFETs" (2003). Faculty Bibliography 2000s. 3694.
https://stars.library.ucf.edu/facultybib2000/3694