Effects of diffusion induced recrystallization on volume diffusion in the copper-nickel system

    Authors

    S. M. Schwarz; B. W. Kempshall;L. A. Giannuzzi

    Abbreviated Journal Title

    Acta Mater.

    Keywords

    volume diffusion; diffusion of Ni into Cu; diffusion induced; recrystallization (DIR); GRAIN-BOUNDARY MIGRATION; SINGLE CRYSTALS; INTERDIFFUSION; GROWTH; Materials Science, Multidisciplinary; Metallurgy & Metallurgical; Engineering

    Abstract

    The effects of diffusion induced recrystallization (DIR) on volume diffusion in the Cu(Ni) system was investigated. Cu-Ni diffusion couples annealed at 500, 550, 600, and 650degreesC for 120 and 200 It were used to calculate the volume diffusion for the Cu(Ni) binary system. Using characterization techniques such as focused ion beam (FIB) and transmission electron microscopy (TEM), observation of the interdiffusion zone revealed areas containing DIR and non-DIR. The volume diffusion of Ni into Cu across the non-DIR regions were calculated using the Boltzmann-Matano (B/M) method at I wt% Ni to be 8.05E-21, 9.88E-20, 4.53E-19, 2.67E-18 m(2)/s for 500, 550, 600, and 650degreesC, respectively. Calculations of volume diffusion across the DIR zones were approximately three to four orders of magnitude higher than the volume diffusion based on the non-DIR information. Literature values for volume diffusion in the Cu(Ni) system are also higher than the non-DIR values by approximately one order of magnitude, implying that previous values may contain grain boundary contributions. (C) 2003 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

    Journal Title

    Acta Materialia

    Volume

    51

    Issue/Number

    10

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    2765

    Last Page

    2776

    WOS Identifier

    WOS:000183599500004

    ISSN

    1359-6454

    Share

    COinS