Title
Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition
Abbreviated Journal Title
Microelectron. Eng.
Keywords
silicon nitride films; wet etching; ECR-PECVD; SINX; OXYNITRIDE; MASK; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied
Abstract
Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N-2 and SiH4, as precursors. Film composition and refractive index as a function of deposition parameters like gas flow ratio and pressure were studied. Wet etching studies were conducted using diluted phosphoric acid and buffered oxide etch (BOE) solutions of various concentrations. The etching studies using phosphoric acid were conducted in the temperature range of 70-90 degreesC. For BOE the temperature range was 25-55 degreesC. The etch rate with BOE solution is much higher than with phosphoric acid. The results indicate that the mechanism of etching with phosphoric acid is different from that with BOE solution. (C) 2003 Elsevier B.V. All rights reserved.
Journal Title
Microelectronic Engineering
Volume
70
Issue/Number
1
Publication Date
1-1-2003
Document Type
Article
Language
English
First Page
109
Last Page
114
WOS Identifier
ISSN
0167-9317
Recommended Citation
"Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition" (2003). Faculty Bibliography 2000s. 4056.
https://stars.library.ucf.edu/facultybib2000/4056