Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
M-PLANE GAN(1(1)OVER-BAR-00); GALLIUM NITRIDE; SAPPHIRE; POLARIZATION; GAMMA-LIALO2; Physics, Applied
Abstract
Free-standing wafers (50 mm diameter) of GaN were grown by halide vapor phase epitaxy on lattice-matched gamma-LiAlO2. We report a transmission electron microscopy study of defects and defect densities in these wafers. The growth direction is [10 (1) over bar0]. Stacking faults in the basal plane are seen when viewing the specimen in the [1 (2) over bar 10] direction with an average spacing of less than 100 nm. Convergent beam electron diffraction measurements show no switch in the polarity and thus the faults are proposed to be ABABACAC changes in the stacking. Threading dislocations are found to have a correlated arrangement with a density of 3x10(8) cm(-2) when viewing the [1 (2) over bar 10] direction and widely varying (depending upon location) when viewing in the [0001] direction. These dislocations act as "seeds" for postgrowth surface features that directly exhibit the correlated nature of these threading dislocations.
Journal Title
Applied Physics Letters
Volume
83
Issue/Number
6
Publication Date
1-1-2003
Document Type
Article
DOI Link
Language
English
First Page
1139
Last Page
1141
WOS Identifier
ISSN
0003-6951
Recommended Citation
Vanfleet, R. R.; Simmons, J. A.; Maruska, H. P.; Hill, D. W.; Chou, M. M. C.; and Chai, B. H., "Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2" (2003). Faculty Bibliography 2000s. 4089.
https://stars.library.ucf.edu/facultybib2000/4089
Comments
"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."