Oxidation behavior of a fully dense polymer-derived amorphous silicon carbonitride ceramic

    Authors

    L. Bharadwaj; Y. Fan; L. G. Zhang; D. P. Jiang;L. N. An

    Comments

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    Abbreviated Journal Title

    J. Am. Ceram. Soc.

    Keywords

    SINGLE-CRYSTAL SILICON; C-N CERAMICS; MECHANICAL-PROPERTIES; HIGH-TEMPERATURE; SICN MEMS; PRECURSOR; KINETICS; FABRICATION; PYROLYSIS; CARBIDE; Materials Science, Ceramics

    Abstract

    The oxidation behavior of a polymer-derived amorphous silicon carbonitride (SiCN) ceramic was studied at temperature range of 900degrees-1200degreesC using fully dense samples, which were obtained using a novel pressure-assisted pyrolysis technique. The oxidation kinetics was investigated by measuring the thickness of oxide layers. The data were found to fit a typical parabolic kinetics. The measured oxidation rate constant and activation energy of the SiCN are close to those of CVD and single-crystal SiC. The results suggest that the oxidation mechanism of the SiCN is the same as that of SiC: oxygen diffusion through a silica layer.

    Journal Title

    Journal of the American Ceramic Society

    Volume

    87

    Issue/Number

    3

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    483

    Last Page

    486

    WOS Identifier

    WOS:000220512800028

    ISSN

    0002-7820

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