Title

Heavy ion backscattering spectrometry at the University of Central Florida

Authors

Authors

G. Braunstein; M. Duffy; S. Maina; B. Tonner;J. C. Banks

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms

Keywords

ion beam analysis; surface analysis; trace-element analysis; time-of-flight; micro contamination; silicon cleaning; TRACE-ELEMENT SENSITIVITY; FLIGHT SPECTROMETER; SCATTERING; Instruments & Instrumentation; Nuclear Science & Technology; Physics, ; Atomic, Molecular & Chemical; Physics, Nuclear

Abstract

The need for increased sensitivity in the detection of metallic contamination, in microelectronics fabrication, led to the development of heavy ion backscattering spectrometry (HIBS). This technique, based on principles similar to those of Rutherford backscattering spectrometry, permits one to quantitatively detect heavy impurities, at a level below 1 x 10(10) atoms/cm(2), on the surface of an otherwise clean silicon substrate. The approach was developed at Sandia National Laboratories, in collaboration with SEMATECH member companies, and Vanderbilt University. Recently, the HIBS instrument was transferred to the Department of Physics of the University of Central Florida, with the purpose of continuing the development of this unique resource, and making it available to industrial and academic investigators. The instrument has been successfully returned to operation, and preliminary tests showed sensitivity levels similar to those obtained at Sandia. A program is being developed to further increase the sensitivity of the instrument, as well as to explore potential new applications, A progress report of these efforts is presented. (C) 2004 Elsevier B.V. All rights reserved.

Journal Title

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms

Volume

219

Publication Date

1-1-2004

Document Type

Article; Proceedings Paper

Language

English

First Page

358

Last Page

363

WOS Identifier

WOS:000221895800067

ISSN

0168-583X

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