Heavy ion backscattering spectrometry at the University of Central Florida

    Authors

    G. Braunstein; M. Duffy; S. Maina; B. Tonner;J. C. Banks

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms

    Keywords

    ion beam analysis; surface analysis; trace-element analysis; time-of-flight; micro contamination; silicon cleaning; TRACE-ELEMENT SENSITIVITY; FLIGHT SPECTROMETER; SCATTERING; Instruments & Instrumentation; Nuclear Science & Technology; Physics, ; Atomic, Molecular & Chemical; Physics, Nuclear

    Abstract

    The need for increased sensitivity in the detection of metallic contamination, in microelectronics fabrication, led to the development of heavy ion backscattering spectrometry (HIBS). This technique, based on principles similar to those of Rutherford backscattering spectrometry, permits one to quantitatively detect heavy impurities, at a level below 1 x 10(10) atoms/cm(2), on the surface of an otherwise clean silicon substrate. The approach was developed at Sandia National Laboratories, in collaboration with SEMATECH member companies, and Vanderbilt University. Recently, the HIBS instrument was transferred to the Department of Physics of the University of Central Florida, with the purpose of continuing the development of this unique resource, and making it available to industrial and academic investigators. The instrument has been successfully returned to operation, and preliminary tests showed sensitivity levels similar to those obtained at Sandia. A program is being developed to further increase the sensitivity of the instrument, as well as to explore potential new applications, A progress report of these efforts is presented. (C) 2004 Elsevier B.V. All rights reserved.

    Journal Title

    Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms

    Volume

    219

    Publication Date

    1-1-2004

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    358

    Last Page

    363

    WOS Identifier

    WOS:000221895800067

    ISSN

    0168-583X

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