Chemical mechanical planarization of copper: Role of oxidants and inhibitors

    Authors

    S. Deshpande; S. C. Kuiry; M. Klimov; Y. Obeng;S. Seal

    Comments

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    Abbreviated Journal Title

    J. Electrochem. Soc.

    Keywords

    CORROSION-INHIBITORS; HYDROGEN-PEROXIDE; SULFATE-SOLUTIONS; BENZOTRIAZOLE; GLYCINE; FILMS; SPECTROSCOPY; SLURRY; CMP; Electrochemistry; Materials Science, Coatings & Films

    Abstract

    Investigations were carried out to understand the effect of hydrogen peroxide as an oxidant and benzotriazole (BTA) as an inhibitor on the chemical mechanical planarization (CMP) of copper. Cu-CMP was studied using electrochemistry and removal rate measurements in solutions containing the oxidizer and the inhibitor. In the presence of 0.1 M glycine, the copper removal rate was high in the solution containing 5% H(2)O(2) at pH 2 because of a Cu-glycine complexation reaction. The dissolution rate of Cu increased due to the formation of the highly soluble Cu-glycine complex in the presence of hydrogen peroxide. Addition of 0.01 M BTA in the solution containing 0.1 M glycine and 5% H(2)O(2) at pH 2 exhibited a reduction in the Cu removal rate by the formation of a Cu-BTA complex on the surface of copper that inhibits the dissolution. X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy investigations revealed the formation of a Cu-glycine complex, which aided the understanding of the mechanism of Cu-oxidant-inhibitor interaction during polishing. (C) 2004 The Electrochemical Society.

    Journal Title

    Journal of the Electrochemical Society

    Volume

    151

    Issue/Number

    11

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    G788

    Last Page

    G794

    WOS Identifier

    WOS:000224927900068

    ISSN

    0013-4651

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