Ti : sapphire crystal used in ultrafast lasers and amplifiers

    Authors

    J. Dong;P. Z. Deng

    Comments

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    Abbreviated Journal Title

    J. Cryst. Growth

    Keywords

    doping; single crystal growth; titanium doped sapphire; solid state; lasers; PULSES; Crystallography; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    The improvement of peak power of femeto-laser depends on the compression of pulse width. The titanium-doped sapphire crystal is the excellent laser crystal with the shortest pulse width. Its theoretical pulse width limit is 3 fs. At present 50-TW tabletop Ti:sapphire lasers have been commercialized. In this paper, comparison of Ti:sapphire crystals grown by temperature gradient technology (TGT) and heat exchange method (HEM) is presented, and results show that the laser quality of Ti:sapphire crystals grown by TGT is similar to or higher than those grown by HEM. circle divide 10-30mm, high optical homogeneity Ti:sapphire amplifiers were fabricated successfully and 5-40TW high power were obtained. We believe that up to 0 100 Ti:sapphire amplifiers (grown by TGT) can be obtained for ultrahigh power laser systems using all Ti:sapphire crystals. in near future. (C) 2003 Elsevier B.V. All rights reserved.

    Journal Title

    Journal of Crystal Growth

    Volume

    261

    Issue/Number

    4

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    514

    Last Page

    519

    WOS Identifier

    WOS:000188547000013

    ISSN

    0022-0248

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