Direct growth of amorphous silica nanowires by solid state transformation of SiO2 films

    Authors

    K. H. Lee; H. S. Yang; K. H. Baik; J. Bang; R. R. Vanfleet;W. Sigmund

    Comments

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    Abbreviated Journal Title

    Chem. Phys. Lett.

    Keywords

    SEMICONDUCTOR NANOWIRES; Chemistry, Physical; Physics, Atomic, Molecular & Chemical

    Abstract

    Amorphous silica nanowires (a-SiONWs) were produced by direct solid state transformation from silica films. The silica nanowires grow on TiN/Ni/SiO2/Si substrates during the annealing in H-2 or a H-2:CH4 mixture at 1050 degreesC. Titanium nitride (TiN) films were used to induce a solid state reaction with silica (SiO2) films on silicon wafers to provide silicon atoms into growing nanowires. The TiN layers induce the diffusion of silicon and oxygen to the surface by a stress gradient built inside the films. The nickel diffuses to the surface during the TiN deposition and acts as a nucleation site for the a-SiONWs. (C) 2003 Elsevier B.V. All rights reserved.

    Journal Title

    Chemical Physics Letters

    Volume

    383

    Issue/Number

    3-4

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    380

    Last Page

    384

    WOS Identifier

    WOS:000187956600031

    ISSN

    0009-2614

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