Title

Direct growth of amorphous silica nanowires by solid state transformation of SiO2 films

Authors

Authors

K. H. Lee; H. S. Yang; K. H. Baik; J. Bang; R. R. Vanfleet;W. Sigmund

Comments

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Abbreviated Journal Title

Chem. Phys. Lett.

Keywords

SEMICONDUCTOR NANOWIRES; Chemistry, Physical; Physics, Atomic, Molecular & Chemical

Abstract

Amorphous silica nanowires (a-SiONWs) were produced by direct solid state transformation from silica films. The silica nanowires grow on TiN/Ni/SiO2/Si substrates during the annealing in H-2 or a H-2:CH4 mixture at 1050 degreesC. Titanium nitride (TiN) films were used to induce a solid state reaction with silica (SiO2) films on silicon wafers to provide silicon atoms into growing nanowires. The TiN layers induce the diffusion of silicon and oxygen to the surface by a stress gradient built inside the films. The nickel diffuses to the surface during the TiN deposition and acts as a nucleation site for the a-SiONWs. (C) 2003 Elsevier B.V. All rights reserved.

Journal Title

Chemical Physics Letters

Volume

383

Issue/Number

3-4

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

380

Last Page

384

WOS Identifier

WOS:000187956600031

ISSN

0009-2614

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