Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
Physics, Applied
Abstract
We report on p-n junction light-emitting diodes fabricated from MgZnO/ZnO/AlGaN/GaN triple heterostructures. Energy band diagrams of the light-emitting diode structure incorporating piezoelectric and spontaneous polarization fields were simulated, revealing a strong hole confinement near the n-ZnO/p-AlGaN interface with a hole sheet density as large as 1.82x10(13) cm(-2) for strained structures. The measured current-voltage (IV) characteristics of the triple heterostructure p-n junctions have rectifying characteristics with a turn-on voltage of similar to3.2 V. Electron-beam-induced current measurements confirmed the presence of a p-n junction located at the n-ZnO/p-AlGaN interface. Strong optical emission was observed at similar to390 nm as expected for excitonic optical transitions in these structures. Experimental spectral dependence of the photocurrent confirmed the excitonic origin of the optical transition at 390 nm. Light emission was measured up to 650 K, providing additional confirmation of the excitonic nature of the optical transitions in the devices.
Journal Title
Applied Physics Letters
Volume
85
Issue/Number
19
Publication Date
1-1-2004
Document Type
Article
DOI Link
Language
English
First Page
4272
Last Page
4274
WOS Identifier
ISSN
0003-6951
Recommended Citation
Osinsky, A.; Dong, J. W.; Kauser, M. Z.; Hertog, B.; Dabiran, A. M.; Chow, P. P.; Pearton, S. J.; Lopatiuk, O.; and Chernyak, L., "MgZnO/AlGaN heterostructure light-emitting diodes" (2004). Faculty Bibliography 2000s. 4623.
https://stars.library.ucf.edu/facultybib2000/4623
Comments
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