Improved and physics-based model for symmetrical spiral inductors

    Authors

    J. Chen;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    passive device; quality factor; RF circuit; spiral inductor; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, the authors focus on the model development of spiral inductors with symmetrical terminals, but the same approach can be applied readily to asymmetrical inductors. Relevant and important physics such as the current crowding in metal line, frequency-dependent permittivity in oxide, and overlap parasitics are accounted for. Experimental data and results calculated from the existing inductor models are included in support of the model development.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    53

    Issue/Number

    6

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    1300

    Last Page

    1309

    WOS Identifier

    WOS:000238154200003

    ISSN

    0018-9383

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